1987.9―1991.7 武汉大学物理系本科
1991.9―1993.7 武汉大学物理系硕士研究生（提前攻博）
1993.9―1996.7 复旦大学物理二系博士研究生
1996.9―1998.7 武汉大学物理科学与技术学院博士后
1998.7―1999.5 武汉大学物理科学与技术学院 副教授
1999.5―1999.11 日本筑波大学物理工学系外国人研究员
2000.2―2002.2 日本学术振兴会（JSPS）外国人特别研究员（ID: P99261）
2002.6―2005.6 日本原子力研究所研究员（JAERI Research fellow）
2005.12― 武汉大学物理科学与技术学院 教授
科学研究参加及主持的科研项目
1．Ⅲ-Ⅴ族半导体缺陷结构、电荷态及亚稳态的正电子研究 国家自然科学基金 9.5万元 参加 顺利结题
2．用正电子谱学研究高分子固体电解质的微观结构及导电机理 国家自然科学基金 9.5万元 参加 顺利结题
3．用慢正电子技术研究半导体表面界面缺陷 湖北省自然科学基金 2.0万元 主持 顺利结题
4．用正电子湮没研究重掺杂半导体载流子饱和的微观机制 武汉大学自强基金 3.0万元 主持 顺利结题
5. 半导体缺陷的正电子谱学研究 教育部青年骨干教师基金 12万元 主持 顺利结题
6．沸石中半导体纳米团簇材料的正电子研究 国家自然科学基金 20万元 主持 顺利结题
7．具有高慢化效率和寿命测量功能的新型正电子束研究 国家自然科学基金 40万元 参加 正在进行
发表论文近期发表的部分论文如下：
[1] Electron Irradiation Induced Defects in ZnO Studied by Positron Annihilation
Z. Q. Chen, M. Maekawa, A. Kawasuso，S. Sakai, and H. Naramoto
Physica B, in press. (Reference ID: PHYSB3617)
[2] Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, R. Suzuki, and T. Ohdaira
Appl. Phys. Lett. 87, 091910 (2005)
[3] Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys. Rev. B71, 115213 (2005)
[4] Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition
Z. Q. Chen, S. Yamamoto, A. Kawasuso, Y. Xu, and T. Sekiguchi
Appl. Surf. Sci. 244, 377 (2005)
[5].Production and recovery of defects in phosphorus implanted ZnO
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
J. Appl. Phys. 97, 013528 (2005)
[6].Evolution of voids in Al+-implanted ZnO probed by a slow positron beam
Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira
Phys. Rev. B69, 035210(2004)
[7].Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam
Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki and A. Kawasuso
Material Science Forum, Vol.445-446, 57(2004)
[8].N+ ion-implantation induced defects in ZnO studied by slow positron beam
Z. Q. Chen, T. Sekiguchi, X. L. Yuan, M. Maekawa, and A. Kawasuso
J.Phys.:Condens.Matter, 16, S293(2004)
[9].Postgrowth annealing of defects in ZnO studied by positron annihilation, X-ray diffraction, Rutherford backscattering, cathodoluminescence and Hall measurements
Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan and T. Sekiguchi
J. Appl. Phys. 94, 4807(2003)
[10].Positron Annihilation Study of Free Volume Holes in Polymers and Polymer Blends
Z. Q. Chen, A. Uedono, T. Suzuki and J.S. He
J. Radio****.& Nucl. Chem., Vol.255, no.2, 291-294(2003)
[11].Compati**lization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
Z. Q. Chen, A. Uedono, Y.Y. Li and J.S. He
Japanese J. Appl. Phys. part 1, No.4A, 2146(2002)
[12].Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams
Z. Q. Chen, A. Uedono, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira and T. Mikado
Appl. Sur. Sci. 194, no.1-4, 112(2002)
[13].Free volume in polycarbonate studied by positron annihilation: Effects of free radicals and trapped electrons on positronium formation
Z. Q. Chen, T.Suzuki, K.Kondo, A.Uedono, Y.Ito
Japanese J. Appl. Phys. Part 1, 40, 5036(2001)
[14].Temperature and Irradiation Effects on Positronium Formation in Polycarbonate
Z. Q. Chen, T.Suzuki, A.Uedono, S.Tanigawa, Y.Ito
Mater. Sci. Forum. 363-365, 297(2001)
[15].Discrimination of Defects in III-V Semiconductors by Positron Lifetime Distribution Measurement
Z. Q. Chen, Z.Wang and S.J.Wang
Radiation Phys. Chem., 58, 703 (2000)
[16].Application of Positron Lifetime Distribution for the Discrimination of Defects in Semiconductors
Z. Q. Chen, Z.Wang and S.J.Wang
Nucl. Instr. Meth. B, 160,139 (2000)
[17].Investigation of Defects in High-energy Heavy Ion Implanted GaAs
Z. Q. Chen, Z.Wang and S.J.Wang
Applied Radiation and Isotopes, 52, 39 (2000)